| 谢玉环,瞿振宇,赵天成,徐文慧,游天桂,杨义.氧化镓功率器件性能温度响应的仿真与优化[J].有色金属材料与工程,2025,46(6):49-56. |
| 氧化镓功率器件性能温度响应的仿真与优化 |
| Simulation and optimization of Ga2O3 power device performance temperature response |
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| DOI：10.13258/j.cnki.nmme.20241129001 |
| 中文关键词: 氧化镓 异质集成 Sentaurus TCAD COMSOL 功率器件 温度响应 |
| 英文关键词:gallium oxide heterogeneous integration Sentaurus TCAD COMSOL power device temperature response |
| 基金项目:上海市战略前沿专项（24DP1500100）；上海市“科技创新行动计划”启明星（22QA1410700） |
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| 中文摘要: |
| 针对氧化镓（Ga2O3）本征热导率较低的问题，可采用智能剥离转移技术将Ga2O3薄膜与高导热衬底材料异质集成，提升其器件散热能力。利用Sentaurus TCAD分别对Ga2O3同质外延材料与SiC基Ga2O3（GaOSiC）功率器件性能的温度响应进行系统的仿真与研究，并利用COMSOL 有限元仿真软件模拟GaOSiC MOSFET在不同条件下的温度分布，分析了钝化层、中间黏附层和衬底种类对器件散热的影响。结果表明，相同功率下，GaOSiC MOSFET器件相较于同质Ga2O3 MOSFET，峰值温升下降～202 K，展现出与高导热衬底集成可大幅缓解Ga2O3器件的自热效应。且GaOSiC MOSFET阈值电压、开关比、导通电阻和击穿电压等比Ga2O3体材料 MOSFET性能更优。此外，用于键合的中间黏附层SiO2/SiNx的存在导致器件最大温升提高16 K。随着钝化层AlN厚度的增大可以使器件最大温升有较小幅度的降低。而集成了更高导热衬底金刚石的异质器件相比于同质器件其温升有更加明显的下降（～330 K）。 |
| 英文摘要: |
| To address the issue of the low intrinsic thermal conductivity of Ga2O3, the intelligent ion-cutting technique is employed to heterogeneously integrate Ga2O3 thin films with high-thermal-conductivity substrates, thereby enhancing the device's heat dissipation capability. In this work, we utilize Sentaurus TCAD to conduct systematic simulations and studies on the temperature response of both homoepitaxial Ga2O3 devices and Ga2O3-on-SiC (GaO/SiC) power devices. Additionally, using COMSOL Multiphysics, we simulate the temperature distribution of GaO/SiC MOSFETs under various conditions and analyze the impact of passivation layers, intermediate adhesion layers, and substrate types on device heat dissipation. The results demonstrate that, under the same power conditions, compared with the homoepitaxial Ga2O3 MOSFET, the GaO/SiC MOSFET exhibits a peak temperature reduction of ~202 K, showcasing a significant mitigation of the self-heating effect in Ga2O3 devices through integration with high-thermal-conductivity substrates. Moreover, GaO/SiC MOSFETs exhibit superior performance compared to homoepitaxial Ga2O3 MOSFETs in terms of threshold voltage, on-off ratio, on-resistance, and breakdown voltage. Furthermore, the presence of an SiO2/SiNx intermediate adhesion layer for bonding results in a 16 K increase in the maximum device temperature rise. Increasing the thickness of the AlN passivation layer can lead to a modest reduction in the maximum device temperature rise. In contrast, Ga2O3 devices integrated with diamond (a higher thermal conductivity substrate) exhibit a more pronounced temperature rise reduction (~330 K) compared to homoepitaxial devices. |
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