期刊信息
  • 主管单位:
  • 上海市科学技术协会
  • 主办单位:
  • 上海有色金属学会
    上海理工大学
  • 名誉主编:
  • 陈兴章
  • 主    编:
  • 刘平
  • 地    址:
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  • 国际标准刊号:
  • 2096-2983
  • 国内统一刊号:
  • 31-2125/TF
  • 单    价:
  • 8.00
  • 定    价:
  • 60.00
孔文博,李颖,潘明艳,张璐,姜博文,纪为国.掺杂对β-Ga2O3晶体力学性能影响[J].有色金属材料与工程,2025,46(6):41-48.
掺杂对β-Ga2O3晶体力学性能影响
Effect of doping on mechanical properties of β-Ga2O3 crystals
  
DOI:10.13258/j.cnki.nmme.20240415003
中文关键词:  β-Ga2O3单晶  弹性模量  掺杂  硬度  纳米压痕
英文关键词:β-Ga2O3 single crystal  elastic modulus  adulterate  hardness  nanoindentation
基金项目:上海市科学技术委员会资助项目(23511102300)
作者单位E-mail
孔文博 上海理工大学 材料与化学学院, 上海 200093
中国科学院上海光学精密机械研究所, 上海 201800 
 
李颖 上海理工大学 材料与化学学院, 上海 200093 liying@usst.edu.cn 
潘明艳 中国科学院上海光学精密机械研究所, 上海 201800  
张璐 中国科学院上海光学精密机械研究所, 上海 201800  
姜博文 上海理工大学 材料与化学学院, 上海 200093
中国科学院上海光学精密机械研究所, 上海 201800 
 
纪为国 中国科学院上海光学精密机械研究所, 上海 201800  
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中文摘要:
      β-Ga2O3是一种性能优异的宽禁带半导体,但单晶又硬又脆、各向异性显著显,对其精密加工一直以来都是个难题。围绕低浓度 Sn 掺杂及高浓度 Al 掺杂对β-Ga2O3单晶力学性能的调控效应展开探究,首先采用 X 射线衍射和拉曼光谱,对掺杂 Sn、Al 后的β-Ga2O3进行晶格常数及晶体结构表征。结果表明:低浓度 Sn 掺杂未改变β-Ga2O3的晶体结构,且无额外杂相生成;而 Al 掺杂导致拉曼光谱中部分特征峰消失,证实其引发了晶格畸变。在掺杂对力学性能的影响研究中,纳米压痕测试结果显示,低浓度 Sn 掺杂与高浓度 Al 掺杂均能显著提升β-Ga2O3的硬度和弹性模量;但压痕断裂韧性测试及纳米划痕试验发现,过高浓度 Al 掺杂会导致材料韧性明显下降。
英文摘要:
      β-Ga2O3 is a wide-bandgap semiconductor with excellent performance. However, its single crystal exhibits high hardness, brittleness, and significant anisotropy, which has long posed a challenge for its precision machining. This study investigated the regulatory effect of low-concentration Sn doping and high-concentration Al doping on the mechanical properties of β-Ga2O3 single crystals. First, X-ray diffraction and Raman spectroscopy were used to characterize the lattice constants and crystal structures of Sn-doped and Al-doped β-Ga2O3 . The results showed that low-concentration Sn doping did not change the crystal structure of β-Ga2O3 , and no additional impurity phases were formed; whereas Al doping caused the disappearance of some characteristic peaks in the Raman spectra, confirming that it induced lattice distortion. Regarding the effect of doping on mechanical properties, nanoindentation tests showed that both low-concentration Sn doping and high-concentration Al doping could significantly improve the hardness and elastic modulus of β-Ga2O3 ; however, the results of indentation fracture toughness tests and nano-scratch tests revealed that excessively high Al doping concentration would lead to a significant decrease in the material’s toughness.
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