期刊信息
  • 主管单位:
  • 上海市科学技术协会
  • 主办单位:
  • 上海有色金属学会
    上海理工大学
  • 名誉主编:
  • 陈兴章
  • 主    编:
  • 刘平
  • 地    址:
  • 上海市军工路516号
  • 邮政编码:
  • 200093
  • 联系电话:
  • (86)021-55781550
  • 电子邮件:
  • nmme@usst.edu.cn
  • 国际标准刊号:
  • 2096-2983
  • 国内统一刊号:
  • 31-2125/TF
  • 单    价:
  • 8.00
  • 定    价:
  • 60.00
肖舒宁,黄倩.氮化碳基复合材料的研究进展[J].有色金属材料与工程,2023,44(4):1-10.
氮化碳基复合材料的研究进展
Research progress of carbon nitride composites
  
DOI:10.13258/j.cnki.nmme.2023.04.001
中文关键词:  石墨相氮化碳  光催化  合成方法  改性方法
英文关键词:graphitic phase carbon nitride  photocatalysis  synthesis method  modification method
基金项目:国家自然科学基金项目(22106105);上海高校特聘教授(东方学者)岗位计划;上海市扬帆计划(20YF1432200):上海市科技支撑碳中和碳达峰专项(21DZ1206300)
作者单位
肖舒宁 上海理工大学 材料与化学学院,上海 200093 
黄倩 上海理工大学 材料与化学学院,上海 200093 
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中文摘要:
      石墨相氮化碳(graphitic phase carbon nitride, g-C3N4)作为一种无金属半导体,被广泛认为是清洁、绿色、可持续能源生产和转化有希望的候选者。近年来,g-C3N4以其合适的带隙(约2.7 eV)、低成本、易制备、无毒、高度稳定和环保等优异性能备受人们关注。这一前景也反映了g-C3N4纳米结构优异的光物理和化学特性,特别是高表面积、高量子效率、高效界面电荷分离和传输,以及易于形成复合材料或结合表面官能团等。综述了g-C3N4纳米结构材料的合成、改性策略及光催化应用的最新研究进展。最后,总结了g-C3N4基光催化剂在生产和应用中面临的挑战,并对g-C3N4基光催化剂的发展前景进行了展望。
英文摘要:
      Graphitic phase carbon nitride (g-C3N4) is a metal-free semiconductor that has gained attention as a promising candidate for sustainable energy production and conversion. This is due to its low cost, easy manufacturing, non-toxicity, high stability, and environmental friendliness, as well as its appropriate band gap (~2.7 eV). The excellent photophysical and chemical properties of the g-C3N4 nanostructure, including its high surface area, quantum efficiency, efficient separation and transport of interfacial charges, and ease of modification using composite materials, have also made it a focus of research in recent years. In this review, we summarize the latest research progress on the synthesis, modification strategies, and photocatalytic applications of g-C3N4 nanostructured materials. Additionally, we provide a summary of the challenges faced by g-C3N4-based photocatalysts in production and application, and provide a prospective analysis of the development potential of g-C3N4-based photocatalysts.
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