| 杨英奇,刘晓艳,郑立允.磁控溅射表面镀膜对Nd2Fe14B稀土永磁体抗腐蚀性能的影响[J].有色金属材料与工程,2019,40(6):14-20. |
| 磁控溅射表面镀膜对Nd2Fe14B稀土永磁体抗腐蚀性能的影响 |
| Effect of Magnetron Sputtering Surface Coating on Corrosion Resistance of Nd2Fe14B Rare Earth Permanent Magnets |
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| DOI：10.13258/j.cnki.nmme.2019.06.003 |
| 中文关键词: Nd2Fe14B 表面处理 磁控溅射 盐雾腐蚀 失重法 |
| 英文关键词:Nd2Fe14B surface treatment magnetron sputtering salt spray corrosion weight loss method |
| 基金项目:国家自然科学基金资助项目（51601053）；河北省高等学校科学技术研究项目（ZD2018213）；河北省自然科学基金资助项目（E2017402039，E2017402139） |
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| 中文摘要: |
| 在Nd2Fe14B稀土永磁体基体表面，采用磁控溅射（直流+射频）技术制备了Ti/Ni，Ti/Al和Al/Ni等二元合金薄膜和Ti/Al/Ni三元合金薄膜。并通过中性盐雾试验、腐蚀失重计算、电化学腐蚀试验、金相观察等方式，对比研究了不同表面处理对Nd2Fe14B稀土永磁体基体抗腐蚀性能的影响，并构建了腐蚀模型。研究发现：Ti/Ni，Ti/Al和Al/Ni等二元合金薄膜和Ti/Al/Ni三元合金薄膜均有效地提高了Nd2Fe14B稀土永磁体基体耐中性盐雾腐蚀和电化学腐蚀的能力；Ti/Al/Ni三元合金薄膜较Ti/Ni，Ti/Al和Al/Ni等二元合金薄膜有更优良的综合耐腐蚀性能，其磁控溅射工艺参数为：Ar流量60 sccm，基片温度常温，Ni，Al，Ti的溅射功率都为250 W，基片转速20 r·min-1，镀膜均速0.3 nm·s-1，总计溅射时间1 h。 |
| 英文摘要: |
| Ti/Ni, Ti/Al and Al/Ni binary alloy thin films and Ti/Al/Ni ternary alloy thin film were prepared by magnetron sputtering (DC + RF) technique on the surface of rare earth permanent magnet Nd2Fe14B. The effect of different surface treatment on the corrosion resistance of Nd2Fe14B rare earth permanent magnet was compared and studied by neutral salt spray test, corrosion weightlessness, electrochemical corrosion test and metallographic observation, and the corrosion model was also established. The results show that Ti/Ni, Ti/Al and Al/Ni binary alloy thin films and Ti/Al/Ni ternary alloy thin film all effectively improve the corrosion resistance of Nd2Fe14B rare earth permanent magnet in neutral salt fog corrosion and electrochemical corrosion. Ti/Al/Ni ternary alloy film has better comprehensive corrosion resistance compared to Ti/Ni, Ti/Al and Al/Ni binary alloy thin films. The magnetron sputtering process parameters are:the Ar airflow quantity of 60 sccm, the substrate temperature being room temperature, the sputtering power of Ni, Al and Ti all is 250 W, the substrate speed of 20 r·min-1, the coating average speed of 0.3 nm·s-1 and the total sputtering time of 1 h. |
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