期刊信息
  • 主管单位:
  • 上海市科学技术协会
  • 主办单位:
  • 上海有色金属学会
    上海理工大学
  • 名誉主编:
  • 陈兴章
  • 主    编:
  • 刘平
  • 地    址:
  • 上海市军工路516号
  • 邮政编码:
  • 200093
  • 联系电话:
  • (86)021-55781550
  • 电子邮件:
  • nmme@usst.edu.cn
  • 国际标准刊号:
  • 2096-2983
  • 国内统一刊号:
  • 31-2125/TF
  • 单    价:
  • 8.00
  • 定    价:
  • 60.00
高钰航,葛春桥,陈露,李强,丁金铎.晶硅异质结光伏技术中透明导电氧化物靶材的研究进展与挑战[J].有色金属材料与工程,2026,47(1):54-63.
晶硅异质结光伏技术中透明导电氧化物靶材的研究进展与挑战
Research progress and challenges of transparent conductive oxide sputtering targets in crystalline silicon heterojunction photovoltaic technology
  
DOI:10.13258/j.cnki.nmme.20250604001
中文关键词:  晶硅异质结电池  透明导电氧化物薄膜  溅射靶材
英文关键词:crystalline silicon heterojunction cell  transparent conductive oxide thin film  sputtering target
基金项目:中山市科技计划资助项目(LJ2021006;CXTD2022005;2022A1009)
作者单位E-mail
高钰航 中山智隆新材料科技有限公司,中山 528459  
葛春桥 中山智隆新材料科技有限公司,中山 528459 gechunqiao@zhilong.pro 
陈露 中山智隆新材料科技有限公司,中山 528459  
李强 中山智隆新材料科技有限公司,中山 528459  
丁金铎 中山智隆新材料科技有限公司,中山 528459  
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中文摘要:
      晶硅异质结(heterojunction, HJT)电池凭借其低温工艺兼容性、高开路电压及优异温度系数,成为突破钝化发射极和背面电池(passivated emitter and rear cell, PERC)与隧穿氧化层钝化接触电池(tunnel oxide passivated contact, TOPCon)效率瓶颈的第三代光伏技术。然而,HJT电池的效率极限与产业化进程高度依赖透明导电氧化物(transparent conductive oxide, TCO)层的多功能协同。当前主流高迁移率靶材通过优化导带色散,电池效率接连突破,同时铟资源约束推动无铟化技术发展。在产业化方面,物理气相沉积(physical vapor deposition, PVD)以高沉积速率及国产化设备主导量产,而反应等离子体沉积(reactive plasma deposition, RPD)通过低能粒子实现薄膜晶格匹配,迁移率较PVD大幅提升,但受限于进口设备成本与低靶材利用率。未来技术突破将驱动靶材性能从实验室向量产精准映射。通过卷对卷(roll-to-roll, R2R)工艺集成与钙钛矿/硅叠层光谱协同,HJT技术有望实现推动光伏产业向高效低碳跨越式发展。
英文摘要:
      Crystalline silicon heterojunction (HJT) cells, recognized as third-generation photovoltaic technology, overcome the efficiency limitations of PERC and TOPCon through low-temperature process compatibility, high open-circuit voltage, and superior temperature coefficients. Their efficiency ceiling and industrialization process rely critically on multifunctional coordination within transparent conductive oxide (TCO) layers. High-mobility sputtering targets optimized via conduction band dispersion have enabled efficiency breakthroughs, while indium scarcity drives indium-free TCO development. Industrially, physical vapor deposition (PVD) dominates manufacturing due to high deposition rates and localized equipment, whereas reactive plasma deposition (RPD) achieves higher mobility through low-energy particle-induced lattice matching but faces constraints from imported equipment costs and low target utilization. Future advancements demand precise laboratory-to-production mapping of target properties, with roll-to-roll (R2R) process integration and perovskite/silicon tandem spectral synergy poised to propel HJT-based high-efficiency, low-carbon photovoltaic industrialization.
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