| 梁悦,王烁,郭佳宝,修慧欣.多孔GaN/Ga2O3异质结双波段紫外光探测器的制备及性能研究[J].有色金属材料与工程,2025,46(1):75-82. |
| 多孔GaN/Ga2O3异质结双波段紫外光探测器的制备及性能研究 |
| Preparation and performance research of dual-band ultraviolet detector with porous GaN/Ga2O3 heterojunction |
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| DOI：10.13258/j.cnki.nmme.20240323002 |
| 中文关键词: GaN 电化学刻蚀 Ga2O3 紫外光探测器 双波段 |
| 英文关键词:GaN electrochemical etching Ga2O3 ultraviolet detector dual-band |
| 基金项目:上海市浦江人才计划资助项目（22PJD046） |
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| 摘要点击次数: 11 |
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| 中文摘要: |
| 以NaNO3溶液作为刻蚀溶液、使用紫外辅助电化学方法刻蚀的多孔GaN作为衬底，使用射频磁控溅射法在GaN衬底上沉积Ga2O3并退火处理，制备了含多孔GaN/β-Ga2O3异质结的高响应度紫外光探测器。该探测器能够实现对短波紫外光和长波紫外光的灵敏探测，双波段探测性能可通过调节电压实现。在2 V偏压下254 nm波长光照射时，有70 mA/W的光响应度和3.95×1012 Jones的比探测率，并显示出高的光暗电流比（约103）；在25 V偏压下365 nm波长光照射时，有260 mA/W的光响应度。该多孔GaN/β-Ga2O3异质结探测器表现出优异的光电性能，在弱光探测以及双波段检测方向将具有广阔的应用前景。 |
| 英文摘要: |
| A high-response ultraviolet detector containing porous GaN/β-Ga2O3 heterojunction has been prepared by using NaNO3 solution as etching solution, porous GaN etched by ultraviolet-assisted electrochemical method as substrate, and Ga2O3 deposited on GaN substrate by radio frequency magnetron sputtering method and annealed. The detector is capable of sensitive detection of short-wave ultraviolet and long-wave ultraviolet, and the dual-band detection performance can be achieved by adjusting the voltage. It has a photoresponsivity of 70 mA/W and a specific detectivity of 3.95×1012 Jones and shows a high light-to-dark current ratio (~103) when irradiated with 254 nm wavelength light at 2 V bias voltage, and a photoresponsivity of 260 mA/W when irradiated with 365 nm wavelength light at 25 V bias voltage. The porous GaN/β-Ga2O3 heterojunction detector exhibits excellent optoelectronic performance and will have a promising application in the direction of weak light detection as well as dual-band detection. |
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