| 方正华.6英寸重掺Sb衬底外延后表面异常解决[J].有色金属材料与工程,2015,36(2):75-78. |
| 6英寸重掺Sb衬底外延后表面异常解决 |
| Epi Defects Solving for 6″ Heavy-doped Sb Substrate |
| |
| DOI:10.13258/j.cnki.snm.2015.02.007 |
| 中文关键词: 基板 外延 气泡状缺陷 外延缺陷 硅晶体 |
| 英文关键词:substrate epitaxy bubble-liked defects EPI defects silicon crystal |
| 基金项目: |
|
| 摘要点击次数: 1857 |
| 全文下载次数: 1493 |
| 中文摘要: |
| 6英寸Sb(锑)基板是国内半导体分立器件使用的主力材料,此材料主要供客户外延使用.但近期某司的基板在外延后出现表面类似气泡状的缺陷,此缺陷异常,无法抛光去除.文章主要研究此外延缺陷与硅晶体的关系,通过试验分析此异常缺陷出现的原因,找到解决的方法. |
| 英文摘要: |
| The 6 inch Sb wafer is the dominating substrate for Discrete Device used for EPI.Bubble-liked defects on this kind of substrate after EPI can not be removed by polishing.Through the experimental analysis of root cause of defects,the paper aims to examine the relationship between EPI defects and silicon crystal so as to find the possible solution. |
| HTML 查看全文 查看/发表评论 下载PDF阅读器 |